MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlA0.16Sb0.84/GaSb heterostructures
Identifieur interne : 000932 ( Main/Repository ); précédent : 000931; suivant : 000933MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlA0.16Sb0.84/GaSb heterostructures
Auteurs : RBID : Pascal:13-0219716Descripteurs français
- Pascal (Inist)
- Méthode MOVPE, Epitaxie phase vapeur, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Hétérostructure, Mécanisme croissance, Microscopie électronique transmission, Diffraction RX, Structure cristalline, Diagramme rotation, Interface, Hétéroépitaxie, Nucléation, Antimoniure de gallium, Article synthèse, Précurseur, Méthode MOCVD, Nanomatériau, Dispositif semiconducteur, InAs, GaSb, 8115K, 8110A, 6166, 6460Q.
English descriptors
- KwdEn :
- Crystal structure, Gallium antimonides, Growth mechanism, Heteroepitaxy, Heterostructures, III-V compound, III-V semiconductors, Indium arsenides, Interfaces, MOCVD, MOVPE method, Nanostructured materials, Nucleation, Precursor, Reviews, Rocking curve, Semiconductor devices, Transmission electron microscopy, VPE, XRD.
Abstract
We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100". Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">MOVPE-grown InAs/AlAs<sub>0.16</sub>Sb<sub>0.84</sub>/InAs and InAs/AlA<sub>0.16</sub>Sb<sub>0.84</sub>/GaSb heterostructures</title><author><name sortKey="Ramvall, P" uniqKey="Ramvall P">P. Ramvall</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Wang, C H" uniqKey="Wang C">C. H. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D Europe B.V, Kapeldreef 75</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Microelectronics, Department Electrical Engineering, National Cheng Kung University</s1><s2>Tainan 701</s2><s3>TWN</s3><sZ>2 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Tainan 701</wicri:noRegion></affiliation></author><author><name sortKey="Astromskas, G" uniqKey="Astromskas G">G. Astromskas</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D Europe B.V, Kapeldreef 75</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Vellianitis, G" uniqKey="Vellianitis G">G. Vellianitis</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D Europe B.V, Kapeldreef 75</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Holland, M" uniqKey="Holland M">M. Holland</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D Europe B.V, Kapeldreef 75</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Droopad, R" uniqKey="Droopad R">R. Droopad</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics, Texas State University</s1><s2>San Marcos, TX 78666</s2><s3>USA</s3><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>San Marcos, TX 78666</wicri:noRegion></affiliation></author><author><name sortKey="Samuelson, L" uniqKey="Samuelson L">L. Samuelson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Wernersson, L E" uniqKey="Wernersson L">L. E. Wernersson</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Electrical and Information Technology, Lund University, Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>8 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Passlack, M" uniqKey="Passlack M">M. Passlack</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>TSMC R&D Europe B.V, Kapeldreef 75</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>3001 Leuven</wicri:noRegion></affiliation></author><author><name sortKey="Diaz, C H" uniqKey="Diaz C">C. H. Diaz</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>TSMC R&D, No. 8. Li-Hsin Rd., Hsinchu Science Park</s1><s2>Hsinchu, 300</s2><s3>TWN</s3><sZ>10 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Hsinchu, 300</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0219716</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0219716 INIST</idno><idno type="RBID">Pascal:13-0219716</idno><idno type="wicri:Area/Main/Corpus">000B58</idno><idno type="wicri:Area/Main/Repository">000932</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal structure</term><term>Gallium antimonides</term><term>Growth mechanism</term><term>Heteroepitaxy</term><term>Heterostructures</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Interfaces</term><term>MOCVD</term><term>MOVPE method</term><term>Nanostructured materials</term><term>Nucleation</term><term>Precursor</term><term>Reviews</term><term>Rocking curve</term><term>Semiconductor devices</term><term>Transmission electron microscopy</term><term>VPE</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOVPE</term><term>Epitaxie phase vapeur</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Hétérostructure</term><term>Mécanisme croissance</term><term>Microscopie électronique transmission</term><term>Diffraction RX</term><term>Structure cristalline</term><term>Diagramme rotation</term><term>Interface</term><term>Hétéroépitaxie</term><term>Nucléation</term><term>Antimoniure de gallium</term><term>Article synthèse</term><term>Précurseur</term><term>Méthode MOCVD</term><term>Nanomatériau</term><term>Dispositif semiconducteur</term><term>InAs</term><term>GaSb</term><term>8115K</term><term>8110A</term><term>6166</term><term>6460Q</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We demonstrate MOVPE-growth of InAs/AlAs<sub>0.16</sub>Sb<sub>0.84</sub>/GaSb and InAs/AlAs<sub>0.16</sub>Sb<sub>0.84</sub>/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100". Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>374</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>MOVPE-grown InAs/AlAs<sub>0.16</sub>Sb<sub>0.84</sub>/InAs and InAs/AlA<sub>0.16</sub>Sb<sub>0.84</sub>/GaSb heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>RAMVALL (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>WANG (C. H.)</s1></fA11><fA11 i1="03" i2="1"><s1>ASTROMSKAS (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>VELLIANITIS (G.)</s1></fA11><fA11 i1="05" i2="1"><s1>HOLLAND (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>DROOPAD (R.)</s1></fA11><fA11 i1="07" i2="1"><s1>SAMUELSON (L.)</s1></fA11><fA11 i1="08" i2="1"><s1>WERNERSSON (L. E.)</s1></fA11><fA11 i1="09" i2="1"><s1>PASSLACK (M.)</s1></fA11><fA11 i1="10" i2="1"><s1>DIAZ (C. H.)</s1></fA11><fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>TSMC R&D Europe B.V, Kapeldreef 75</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Microelectronics, Department Electrical Engineering, National Cheng Kung University</s1><s2>Tainan 701</s2><s3>TWN</s3><sZ>2 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Physics, Texas State University</s1><s2>San Marcos, TX 78666</s2><s3>USA</s3><sZ>6 aut.</sZ></fA14><fA14 i1="05"><s1>Electrical and Information Technology, Lund University, Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>8 aut.</sZ></fA14><fA14 i1="06"><s1>TSMC R&D, No. 8. Li-Hsin Rd., Hsinchu Science Park</s1><s2>Hsinchu, 300</s2><s3>TWN</s3><sZ>10 aut.</sZ></fA14><fA20><s1>43-48</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000509080790080</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0219716</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We demonstrate MOVPE-growth of InAs/AlAs<sub>0.16</sub>Sb<sub>0.84</sub>/GaSb and InAs/AlAs<sub>0.16</sub>Sb<sub>0.84</sub>/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100". Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A66</s0></fC02><fC02 i1="04" i2="3"><s0>001B60D60Q</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>MOVPE method</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>VPE</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Heterostructures</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>XRD</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Crystal structure</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Diagramme rotation</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Rocking curve</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Diagrama rotación</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Interface</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Interfaces</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Hétéroépitaxie</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Heteroepitaxy</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Heteroepitaxia</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Nucléation</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Nucleation</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Antimoniure de gallium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Article synthèse</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Reviews</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Précurseur</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Precursor</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>MOCVD</s0><s5>31</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>32</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Dispositif semiconducteur</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Semiconductor devices</s0><s5>33</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>GaSb</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>6166</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>6460Q</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>203</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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